1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor with anti-parallel diode nchannel enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. short circuit rated igbt's are specifical- ly suited for applications requiring a guaranteed short circuit withstand time such as motor control drives. fast switching characteristics result in efficient operation at high frequencies. copackaged igbt's save space, reduce assembly time and cost. ? industry standard high power to264 package (to3pbl) ? high speed e off : 216 j/a typical at 125 c ? high short circuit capability 10 s minimum ? soft recovery free wheeling diode is included in the package ? robust high voltage termination ? robust rbsoa maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 1200 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 1200 vdc gateemitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c e continuous @ t c = 90 c e repetitive pulsed current (1) i c25 i c90 i cm 38 25 76 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 212 1.69 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circuit withstand time (v cc = 720 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to case diode e junction to ambient r q jc r q jc r q ja 0.6 0.9 35 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) (1) pulse width is limited by maximum junction temperature. repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's is a trademark of motorola, inc. preferred devices are motorola recommended choices for future use and best overall value. rev 3 order this document by mgy25n120d/d motorola semiconductor technical data mgy25n120d igbt & diode in to264 25 a @ 90 c 38 a @ 25 c 1200 volts short circuit rated case 340g02 style 5 to264 motorola preferred device g c e c e g ? motorola, inc. 1997
mgy25n120d 2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 25 m adc) temperature coefficient (positive) v (br)ces 1200 e e 960 e e vdc mv/ c zero gate voltage collector current (v ce = 1200 vdc, v ge = 0 vdc) (v ce = 1200 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 100 2500 m adc gatebody leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 250 nadc on characteristics (1) collectortoemitter onstate voltage (v ge = 15 vdc, i c = 12.5 adc) (v ge = 15 vdc, i c = 12.5 adc, t j = 125 c) (v ge = 15 vdc, i c = 25 adc) v ce(on) e e e 2.37 2.15 2.98 3.24 e 4.19 vdc gate threshold voltage (v ce = v ge , i c = 1.0 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 20 adc) g fe e 12 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 1859 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 198 e transfer capacitance f = 1 . 0 mhz) c res e 30 e switching characteristics (1) turnon delay time t d(on) e 91 e ns rise time t r e 124 e turnoff delay time (v cc = 720 vdc, i c = 25 adc, v 15 vd l 300 h t d(off) e 196 e fall time ( cc , c , v ge = 15 vdc, l = 300 h r g = 20 w ) t f e 310 e turnoff switching loss r g = 20 w ) energy losses include atailo e off e 2.44 4.69 mj turnon switching loss e on e 3.14 5.22 total switching loss e ts e 5.58 9.91 turnon delay time t d(on) e 88 e ns rise time t r e 126 e turnoff delay time (v cc = 720 vdc, i c = 25 adc, v 15 vd l 300 h t d(off) e 236 e fall time ( cc , c , v ge = 15 vdc, l = 300 h r g = 20 w , t j = 125 c ) t f e 640 e turnoff switching loss r g = 20 w , t j = 125 c) energy losses include atailo e off e 5.40 e mj turnon switching loss e on e 5.03 e total switching loss e ts e 10.43 e gate charge (v 720 vd i 25 ad q t e 62 e nc (v cc = 720 vdc, i c = 25 adc, v ge = 15 vdc ) q 1 e 22 e v g e = 15 vdc) q 2 e 25 e diode characteristics diode forward voltage drop (i ec = 12.5 adc) (i ec = 12.5 adc, t j = 125 c) (i ec = 25 adc) v fec e e e 2.89 1.75 3.65 3.50 e 4.45 vdc (1) pulse test: pulse width 300 m s, duty cycle 2%. (continued)
mgy25n120d 3 motorola igbt device data electrical characteristics e continued (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit diode characteristics e continued reverse recovery time t rr e 114 e ns (i f = 25 adc, v r = 720 vdc, t a e 71 e (i f 25 adc , v r 720 vdc , di f /dt = 150 a/ m s) t b e 43 e reverse recovery stored charge q rr e 0.65 e m c reverse recovery time t rr e 226 e ns (i f = 25 adc, v r = 720 vdc, t a e 165 e (i f 25 adc , v r 720 vdc , di f /dt = 150 a/ m s, t j = 125 c) t b e 61 e reverse recovery stored charge q rr e 1.90 e m c internal package inductance internal emitter inductance (measured from the emitter lead 0.25 from package to emitter bond pad) l e e 13 e nh figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics figure 4. collectortoemitter saturation voltage versus junction temperature typical electrical characteristics v ge = 20 v t j = 25 c v ce , collector-to-emitter voltage (volts) i c , collector current (amps) 12.5 v 17.5 v 15 v 10 v 45 30 0 8 4 02 6 60 15 7 3 15 v ce = 10 v 250 m s pulse width t j = 125 c v ge , gate-to-emitter voltage (volts) i c , collector current (amps) 70 20 10 0 16 8 6 410 25 c v ge = 15 v 250 m s pulse width t j , junction temperature ( c) 1 150 50 0 -50 100 v ce , collector-to-emitter voltage (volts) i c = 20 a 40 15 a 12 10 a 30 50 2 3 4 75 v ge = 20 v t j = 125 c v ce , collector-to-emitter voltage (volts) i c , collector current (amps) 12.5 v 17.5 v 15 v 10 v 45 30 0 8 4 02 6 60 15 7 3 15 75 60 14
mgy25n120d 4 motorola igbt device data v ce , collector-to-emitter voltage (volts) figure 5. capacitance variation figure 6. gatetoemitter voltage versus total charge c oes 10000 10 25 20 15 5 0 q g , total gate charge (nc) 16 8 0 70 20 0 c, capacitance (pf) 10 t j = 25 c v ge = 0 v c res c ies v ge , gate-to-emitter voltage (volts) 4 q t q 1 q 2 t j = 25 c i c = 25 a 100 60 40 12 1000 figure 7. turnoff losses versus gate resistance figure 8. turnoff losses versus case temperature r g , gate resistance (ohms) e 4 2 50 30 20 10 40 3.5 3 v cc = 720 v v ge = 15 v t j = 125 c i c = 25 a t c , case temperature ( c) 6 150 75 25 0 100 4 v cc = 720 v v ge = 15 v r g = 20 w 50 125 i c = 25 a 2.5 15 a 10 a 15 a 10 a 7 5 3 1 2 14 6 2 10 10 50 30 6 5.5 5 4.5 , turn-off energy losses (mj) off e , turn-off energy losses (mj) off i c , collector current (amps) v ge = 15 v r ge = 20 w t j = 125 c figure 9. diode forward voltage drop figure 10. reverse biased safe operating area v ce , collector-to-emitter voltage (volts) 100 10 0.1 10,000 1 1 100 10 25 c v fec , emitter-to-collector voltage (volts) i 50 30 0 4 3 1 02 40 20 10 t j = 125 c f 5 1000 , instantaneous forward current (amps)
mgy25n120d 5 motorola igbt device data t, time (s) r(t), normalized effective transient thermal resistance 1.0 0.1 0.01 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.02 d = 0.5 0.05 0.01 single pulse 0.1 0.2 figure 11. thermal response
mgy25n120d 6 motorola igbt device data package dimensions case 340g02 to264 issue f dim a min max min max inches 2.8 2.9 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.0 11.4 0.433 0.449 n 3.95 4.75 0.156 0.187 p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.15 2.35 0.085 0.093 u 6.1 6.5 0.240 0.256 w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m yq s 123 b q y t style 5: pin 1. gate 2. collector 3. emitter motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa/europe/locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 035487 8488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com t ouchtone 16022446609 asia/pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mgy25n120d/d ?
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